MRF7P20040HR3 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 82°C, P_out = 40 W CW
32 Vdc, I_DQA = 150 mA
32 Vdc, V_GSB = 1.5 Vdc
Case Temperature 78°C, P_out = 10 W CW
32 Vdc, I_DQA = 150 mA
32 Vdc, V_GSB = 1.5 Vdc
R_θJC
°C/W
2.3
2.3
2.5
2.9
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽³⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 32 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics ⁽³⁾
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 33.5 μAdc)
V_GS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(V_DD = 32 Vdc, I_D = 150 mAdc, Measured in Functional Test)
V_GS(Q)
2
2.7
3.5
Vdc
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 0.325 Adc)
V_DS(on)
0.1
0.24
0.3
Vdc
Functional Tests ^(4,5) (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 32 Vdc, I_DQA = 150 mA, V_GSB = 1.5 Vdc, P_out = 10 W Avg.,
f = 2025 MHz, Single - Carrier W - CDMA, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset.
Power Gain
G_ps
16
18.2
21
dB
Drain Efficiency
η_D
39
42.6
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
6.9
7.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 34.8
- 30
dBc
Input Return Loss
IRL
—
- 17.8
- 10
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/
Application Notes - AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
5. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF7P20040HR3 MRF7P20040HSR3
2
RF Device Data
Freescale Semiconductor