MRF7P20040HR3 Datasheet, PDF (10/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V_DD = 32 Vdc, I_DQA = 150 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle
49
48
Ideal
f = 2010 MHz
47
46
f = 2010 MHz
45
44
43
Actual
f = 2025 MHz
42
41
f = 2025 MHz
40
39
17 18 19 20 21 22 23 24 25 26 27
P_in, INPUT POWER (dBm)
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 32 V
f
(MHz)
2010
2025
P1dB
Watts dBm
26
44.1
26
44.2
P3dB
Watts dBm
31
44.9
31
44.9
Test Impedances per Compression Level
f
(MHz)
Z_source
Ω
Z_load
Ω
2010
P1dB 2.49 - j18.56 15.82 - j0.28
2025
P1dB 2.66 - j19.78 15.78 + j0.52
Figure 13. Pulsed CW Output Power
versus Input Power @ 32 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF7P20040HR3 MRF7P20040HSR3
10
RF Device Data
Freescale Semiconductor