MRF6VP3450HR5 Datasheet, PDF (9/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — OFDM
100
10
1
0.1
8K Mode DVB−T OFDM
64 QAM Data Carrier Modulation
0.01 _{5 Symbols}
0.001
0.0001
0
2
4
6
8
10
12
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier DVB - T OFDM
−20
7.61 MHz
−30
−40
−50
4 kHz BW
4 kHz BW
−60
−70
ACPR Measured at 4 MHz Offset
from Center Frequency
−80
−90
8K Mode DVB−T OFDM
−100
64 QAM Data Carrier Modulation, 5 Symbols
−110
−5 −4 −3 −2 −1 0 1 2 3 4 5
f, FREQUENCY (MHz)
Figure 15. 8K Mode DVB - T OFDM Spectrum
23
22.5 I_DQ = 1400 mA
22
21.5 975 mA
21 _{700 mA}
1250 mA
1075 mA
20.5
20
20
V_DD = 50 Vdc, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 16. Single - Carrier DVB - T OFDM Power
Gain versus Output Power
−50
V_DD = 50 Vdc, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
−60 _{IDQ = 700 mA}
975 mA
1400 mA
−70
1250 mA
1075 mA
20
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 17. Single - Carrier DVB - T OFDM ACPR
versus Output Power
65
60 ^{VDD = 50 Vdc, IDQ = 1400 mA}
55
f = 860 MHz, 8K Mode OFDM
64 QAM Data Carrier Modulation
50 _{5 Symbols}
45
40
35
30
25
T_C = −30_C
20
15 ^25_C
85_C
10
5
0
10
25_C ^85_C
−30_C
ACPR
η_D
G_ps
100
−46
−48
−50
−52
−54
−56
−58
−60
−62
−64
−66
−68
−70
−72
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 18. Single - Carrier DVB - T OFDM ACPR Power
Gain and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
9