MRF6VP3450HR5 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB - T OFDM Performance: V_DD = 50 Volts, I_DQ = 1400 mA,
P_out = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain — 22.5 dB
Drain Efficiency — 28%
ACPR @ 4 MHz Offset — - 62 dBc @ 4 kHz Bandwidth
• Typical Broadband Two - Tone Performance: V_DD = 50 Volts, I_DQ = 1400 mA,
P_out = 450 Watts PEP, f = 470 - 860 MHz
Power Gain — 22 dB
Drain Efficiency — 44%
IM3 — - 29 dBc
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts Avg. (DVB - T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP3450H
Rev. 2.1, 11/2008
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450HSR5
860 MHz, 450 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D - 05, STYLE 1
NI - 1230
MRF6VP3450HR6(HR5)
CASE 375E - 04, STYLE 1
NI - 1230S
MRF6VP3450HSR6(HSR5)
PARTS ARE PUSH - PULL
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Rating
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Symbol
V_DSS
V_GS
T_stg
T_C
T_J
Value
- 0.5, +110
- 6.0, +10
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
© Freescale Semiconductor, Inc., 2008. All rights reserved. _{MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5}
RF Device Data
Freescale Semiconductor
1