MRF6VP3450HR5 Datasheet, PDF (10/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — 470 - 860 MHz
23
60
22.5
G_ps
22
50
21.5 860 MHz
21
40
20.5 665 MHz
20
19.5
19
18.5
18
17.5
17
10
470 MHz
860 MHz
665 MHz
30
470 MHz
20
η_D
10
V_DD = 50 Vdc, I_DQ = 1200 mA
Pulse Width = 50 μsec, Duty Cycle = 2.5%
0
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 19. Broadband Pulsed Power Gain and Drain
Efficiency versus Output Power — 470 - 860 MHz
27
70
26
V_DD = 50 Vdc, P_out = P1dB, I_DQ = 1200 mA
Pulse Width = 50 μsec, Duty Cycle = 2.5%
25
60
24
η_D
23
50
22
21
G_ps
700
40
650
20
600
19
P1dB
18
30
550
500
17
20
450
470 500 530 560 590 620 650 680 710 740 770 800 830 860
f, FREQUENCY (MHz)
Figure 20. Pulsed Power Gain and Drain Efficiency
versus Frequency at P1dB — 470 - 860 MHz
50
−50
45
V_DD = 50 Vdc, I_DQ = 1400 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation, 5 Symbols
860 MHz
40
−55
35 _{665 MHz}
470 MHz
30
25
860 MHz ^Gps
20
15
665 MHz
ACPR
10
5
η_D
0
3
10
470 MHz ^−60
−65
−70
−75
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 21. Single - Carrier DVB - T OFDM ACPR, Power Gain
and Drain Efficiency versus Output Power — 470 - 860 MHz
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
10
RF Device Data
Freescale Semiconductor