MRF6VP3450HR5 Datasheet, PDF (11/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — 470 - 860 MHz
24
36
23
34
G_ps
22
32
21
30
η_D
20
28
0
19
26
−2
18
IRL
17
V_DD = 50 Vdc, I_DQ = 1400 mA
P_out = 90 W Avg., 8K Mode OFDM
64 QAM Data Carrier Modulation, 5 Symbols
16
24
−4
22
−6
20
−8
470 500 530 560 590 620 650 680 710 740 770 800 830 860
f, FREQUENCY (MHz)
Figure 22. Single - Carrier DVB - T OFDM Power Gain, Drain Efficiency
and IRL versus Frequency — 470 - 860 MHz
TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 90 W Avg., and η_D = 28%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 23. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
11