MRF6VP3450HR5 Datasheet, PDF (2/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
R_θJC
0.27
°C/W
Case Temperature 62°C, 450 W Pulsed, 50 μsec Pulse Width, 2.5% Duty Cycle
0.04
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽³⁾
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
Drain - Source Breakdown Voltage
(I_D = 50 mA, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_GSS
—
—
V_(BR)DSS
110
—
I_DSS
—
—
I_DSS
—
—
10
μAdc
—
Vdc
10
μAdc
10
μAdc
On Characteristics
Gate Threshold Voltage ⁽³⁾
(V_DS = 10 Vdc, I_D = 320 μAdc)
Gate Quiescent Voltage ⁽⁴⁾
(V_DD = 50 Vdc, I_D = 1400 mAdc, Measured in Functional Test)
V_GS(th)
1
V_GS(Q)
2
1.6
2.5
Vdc
2.6
3.5
Vdc
Drain - Source On - Voltage ⁽³⁾
(V_GS = 10 Vdc, I_D = 1.58 Adc)
V_DS(on)
—
0.25
—
Vdc
Dynamic Characteristics ^(3,5)
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
0.92
—
pF
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
54.5
—
pF
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_iss
—
373
—
pF
Functional Tests ⁽⁴⁾ (In Freescale Broadband Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 1400 mA, P_out = 90 W Avg., f = 860 MHz,
DVB - T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
G_ps
21.5
22.5
24.5
dB
Drain Efficiency
η_D
26
28
—
%
Adjacent Channel Power Ratio
ACPR
—
- 62
- 59
dBc
Input Return Loss
IRL
—
-4
-2
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push - pull configuration.
5. Part internally input matched.
(continued)
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
2
RF Device Data
Freescale Semiconductor