MRF6VP3450HR5 Datasheet, PDF (8/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — TWO - TONE
−20
V_DD = 50 Vdc, I_DQ = 1400 mA, f1 = 854 MHz
−30 ^{f2 = 860 MHz, Two−Tone Measurements}
−40
3rd Order
−50
5th Order
−60
−70
7th Order
−10
V_DD = 50 Vdc, P_out = 450 W (PEP), I_DQ = 1400 mA
Two−Tone Measurements
−20
3rd Order
−30
−40
5th Order
−50
−60
7th Order
−80
5
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 10. Intermodulation Distortion
Products versus Output Power
−70
0.1
1
10
60
TWO−TONE SPACING (MHz)
Figure 11. Intermodulation Distortion
Products versus Tone Spacing
23
22.8
22.6
22.4 ^IDQ ^{= 1400 mA}
22.2
22 1075 mA
21.8
975 mA
1250 mA
21.6
21.4 700 mA
21.2
21
50
V_DD = 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 12. Two - Tone Power Gain versus
Output Power
−20
V_DD = 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−25
−30 975 mA
I_DQ = 700 mA
−35 ^{1075 mA}
−40 _{1250 mA}
−45
1400 mA
−50
50
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 13. Third Order Intermodulation
Distortion versus Output Power
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
8
RF Device Data
Freescale Semiconductor