MRF6V12500HR3_10 Datasheet, PDF (9/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 960--1215 MHz
20
66
19
G_ps
64
18
62
17
60
16
η_D
58
15
56
14
0
13
IRL
--5
12
11 ^{VDD = 50 Vdc, Pout = 500 W Peak (50 W Avg.), IDQ = 200 mA}
Pulse Width = 128 μsec, Duty Cycle = 10%
10
900 950 1000 1050 1100 1150 1200 1250
--10
--15
--20
1300
f, FREQUENCY (MHz)
Figure 14. Pulsed Power Gain, Drain Efficiency and IRL
versus Frequency
22
V_DD = 50 Vdc
I_DQ = 200 mA
21 Pulse Width = 128 μsec
Duty Cycle = 10%
20
19
18
65
1215 MHz
1150 MHz
60
η_D
960 MHz
1030 MHz
55
1150 MHz
50
G_ps
960 MHz
1030 MHz
45
1215 MHz
17
40
200 250 300 350 400 450 500 550 600
P_out, PEAK OUTPUT POWER (WATTS)
Figure 15. Power Gain and Drain Efficiency versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6V12500HR3 MRF6V12500HSR3
9