MRF6V12500HR3_10 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulsed
applications.
• Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 200 mA,
Pulsed Width = 128 μsec, Duty Cycle = 10%
Application
P_out
(W)
f
G_ps
η_D
(MHz)
(dB)
(%)
Narrowband
500 Peak
1030
19.7
62.0
Broadband
500 Peak 960--1215 18.5
57.0
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V12500H
Rev. 2, 9/2010
MRF6V12500HR3
MRF6V12500HSR3
960--1215 MHz, 500 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF6V12500HR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V12500HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
--0.5, +110
Vdc
V_GS
--6.0, +10
Vdc
T_stg
-- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 500 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Z_θJC
0.044
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V12500HR3 MRF6V12500HSR3
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