MRF6V12500HR3_10 Datasheet, PDF (10/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Z_o = 5 Ω
f = 1215 MHz
Z_load
f = 960 MHz
f = 1215 MHz
Z_source
f = 960 MHz
V_DD = 50 Vdc, I_DQ = 200 mA, P_out = 500 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
960
2.25 -- j1.78
1.38 -- j1.53
1030
2.51 -- j1.02
1.48 -- j1.11
1090
2.69 -- j0.73
1.51 -- j0.78
1150
2.71 -- j0.65
1.53 -- j0.49
1215
2.48 -- j0.76
1.53 -- j0.33
Z_source =
Z_load =
Test circuit impedance as measured from
gate to ground.
Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz
MRF6V12500HR3 MRF6V12500HSR3
10
RF Device Data
Freescale Semiconductor