MRF6V12500HR3_10 Datasheet, PDF(7/13 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF6V12500HR3_10 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

◁

Zo = 5 â¦

f = 1030 MHz Zload

f = 1030 MHz

Zsource

VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak

MHz

Zsource

â¦

Zload

â¦

1030

1.36 -- j1.27

2.50 -- j0.17

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 12. Series Equivalent Source and Load Impedance

RF Device Data

Freescale Semiconductor

MRF6V12500HR3 MRF6V12500HSR3

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