MRF6V12500HR3_10 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
700
T_C = --30_C
600
500
25_C
85_C
55_C
400
300
200
100
V_DD = 50 Vdc, I_DQ = 200 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
0
0
2
4
6
8
10
12
P_in, INPUT POWER (dBm) PULSED
Figure 9. Pulsed Output Power versus
Input Power
22
80
G_ps
21
70
T_C = --30_C
20
60
19 ^25_C
50
18
55_C
40
85_C
17
30
16
η_D
15
14
30
20
V_DD = 50 Vdc, I_DQ = 200 mA, f = 1030 MHz 10
Pulse Width = 128 μsec, Duty Cycle = 10%
0
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
10⁹
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 500 W Peak, Pulse Width = 128 μsec,
Duty Cycle = 10%, and η_D = 62%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF6V12500HR3 MRF6V12500HSR3
6
RF Device Data
Freescale Semiconductor