MRF6V12500HR3_10 Datasheet, PDF (5/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10000
1000
100
10
C_iss
C_oss
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
1
C_rss
0.1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
160
140
120
P_out = 475 W
100
P_out = 525 W
80
P_out = 500 W
60
40
20
V_DD = 50 Vdc, I_DQ = 200 mA
f = 1030 MHz, Pulse Width = 128 μsec
0
0
5
10
15
20
25
DUTY CYCLE (%)
Figure 4. Safe Operating Area
22
80
21
70
G_ps
20
60
19
50
18
40
η_D
17
30
16
20
15
V_DD = 50 Vdc, I_DQ = 200 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
10
14
30
100
0
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
62
61
P3dB = 57.6 dBm (575 W)
60
Ideal
59 P1dB = 57.1 dBm (511 W)
58
57
Actual
56
55
54
53
52
51
V_DD = 50 Vdc, I_DQ = 200 mA, f = 1030 MHz
50
Pulse Width = 128 μsec, Duty Cycle = 10%
49
30
32
34
36
38
40
42
P_in, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
22
21
I_DQ = 800 mA
20
600 mA
400 mA
19
200 mA
18
V_DD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
17
30
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
22
21
20
19
18
17 _{IDQ = 200 mA, f = 1030 MHz}
16
Pulse Width = 128 μsec
Duty Cycle = 10%
15
50 V
45 V
40 V
14
13
V_DD = 30 V
35 V
12
30
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6V12500HR3 MRF6V12500HSR3
5