33937 Datasheet, PDF (9/47 Pages) Freescale Semiconductor, Inc – Three Phase Field Effect Transistor Pre-driver

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 8.0 V ≤ V_PWR = V_SUP ≤ 40 V, -40°C ≤ T_A ≤ 135°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CHARGE PUMP
Charge Pump
High Side Switch On Resistance
Low Side Switch On Resistance
Regulation Threshold Difference^{(15), (17)}
Charge Pump Output Voltage^{(16), (17)}
I_OUT = 40 mA, 6.0 V < V_SYS < 8.0 V
I_OUT = 40 mA, V_SYS > = 8.0 V
R_{DS(on)_HS}
–
6.0
10
Ω
R_{DS(on)_LS}
–
5.0
9.4
Ω
V_THREG
250
500
900
mV
V_CP
V
8.5
9.5
–
12
–
–
GATE DRIVE
High Side Driver On Resistance (Sourcing)
V_PWR = V_SUP = 16 V, -40°C ≤ T_A ≤ 25°C
V_PWR = V_SUP = 16 V, 25°C < T_A ≤ 135°C
R_{DS(ON)_H_SRC}
–
–
Ω
–
6.0
–
8.5
High Side Driver On Resistance (Sinking)
V_PWR = V_SUP = 16 V
High Side Current Injection Allowed Without Malfunction^{(17), (18)}
Low Side Driver On Resistance (Sourcing)
V_PWR = V_SUP = 16 V, -40°C ≤ T_A ≤ 25°C
V_PWR = V_SUP = 16 V, 25°C < T_A ≤ 135°C
R_{DS(ON)_H_SINK}
–
I_{HS_INJ}
–
R_{DS(ON)_L_SRC}
–
–
Ω
–
3.0
–
0.5
A
Ω
–
6.0
–
8.5
Low Side Driver On-Resistance (Sinking)
V_PWR = V_SUP = 16 V
R_{DS(ON)_L_SINK}
–
Ω
–
3.0
Low Side Current Injection Allowed Without Malfunction^{(17), (18)}
I_{LS_INJ}
–
–
0.5
Α
Gate Source Voltage, V_PWR = V_SUP = 40 V
V
High Side, I_GATE = 0⁽¹⁹⁾
Low Side, I_GATE = 0
V_{GS_H}
V_{GS_L}
13
14.8
16.5
13
15.4
17
High Side Gate Drive Output Leakage Current, Per Output⁽²⁰⁾
I_{HS_LEAK}
–
–
18
µA
Notes
15. When VLS is this amount below the normal VLS linear regulation threshold, the charge pump is enabled.
16. V_SYS is the system voltage on the input to the charge pump. With recommended external components (1.0 µF, MUR 120 diode). The
Charge Pump is designed to supply the gate currents of a system with 100 A FETs in a 12 V application.
17. This parameter is a design characteristic, not production tested.
18. Current injection only occurs during output switch transitions. The IC is immune to specified injected currents for a duration of
approximately 1.0µs after an output switch transition. 1.0 µs is sufficient for all intended applications of this IC.
19. If a slightly higher gate voltage is required, larger bootstrap capacitors are required. At high duty cycles, the bootstrap voltage may not
recover completely, leading to a higher output on-resistance. This effect can be minimized by using low ESR capacitors for the bootstrap
and the VLS capacitors.
20. A small internal charge pump will supply up to 30 μA nominal to compensate for leakage on the High Side FET gate output and maintain
voltages after bootstrap events. It is not intended for external components to be connected to the High Side FET gate, but small amounts
of additional leakage can be accommodated. See Figures 11 through 14 for typical load margins.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33937
9