33937 Datasheet, PDF (12/47 Pages) Freescale Semiconductor, Inc – Three Phase Field Effect Transistor Pre-driver

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 8.0 V ≤ V_PWR = V_SUP ≤ 40 V, -40°C ≤ T_A ≤ 135°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
SUPERVISORY AND CONTROL CIRCUITS
Logic Inputs (Px_LS, Px_HS, EN1, EN2) ⁽³¹⁾
High Level Input Voltage Threshold
Low Level Input Voltage Threshold
Logic Inputs (SI, SCLK, CS) ^{(30), (31)}
High Level Input Voltage Threshold
Low Level Input Voltage Threshold
Input Logic Threshold Hysteresis ⁽³⁰⁾
Inputs Px_LS, SI, SCLK, CS, Px_HS, EN1, EN2
Input Pull-down Current, (Px_LS, SI, SCLK, EN1, EN2)
0.3 V_DD ≤ V_IN ≤ V_DD
Input Pull-up Current, (CS, Px_HS) ⁽³²⁾
0 ≤ V_IN ≤ 0.7 V_DD
Input Capacitance ⁽³⁰⁾
0.0 V ≤ V_IN ≤ 5.5 V
RST Threshold ⁽³³⁾
RST Pull-down Resistance
0.3 V_DD ≤ V_IN ≤ V_DD
Power-ON RST Threshold, (V_DD Falling)
SO High Level Output Voltage
I_OH = 1.0 mA
SO Low Level Output Voltage
I_OL = 1.0 mA
SO Tri-state Leakage Current
CS = 0.7 V_DD, 0.3 V_DD = V_SO = 0.7 V_DD
SO Tri-state Capacitance ^{(30), (34)}
0.0 V ≤ V_IN ≤ 5.5 V
INT High Level Output Voltage
I_OH = -500 µA
INT Low Level Output Voltage
I_OL = 500 µA
V_IH
V_IL
V_IH
V_IL
V_IHYS
I_INPD
V
–
–
2.1
0.9
–
–
V
–
–
2.1
0.9
–
–
mV
100
250
450
µA
8.0
–
18
I_INPU
10
–
25
µA
C_IN
pF
–
15
–
V_{TH_RST}
1.0
–
2.1
V
R_RST
kΩ
40
60
85
V_THRST
3.4
4.0
4.5
V
V_SOH
V
0.9 V_DD
–
–
V_SOL
V
–
–
0.1 V_DD
I_{SO_LEAK_T}
µA
-1.0
–
1.0
C_{SO_T}
pF
–
15
–
V_OH
V
0.85 V_DD
–
V_DD
V_OL
V
–
–
0.5
THERMAL WARNING
Thermal Warning Temperature ^{(30), (35)}
Thermal Hysteresis ⁽³⁰⁾
T_WARN
150
170
185
°C
T_HYST
8.0
10
12
°C
Notes
30. This parameter is guaranteed by design, not production tested.
31. Logic threshold voltages derived relative to a 3.3 V 10% system.
32. Pull-up circuits will not allow back biasing of V_DD.
33. There are two elements in the RST circuit: 1) one generally lower threshold enables the internal regulator; 2) the second removes the
reset from the internal logic.
34. This parameter applies to the OFF state (tri-stated) condition of SO is guaranteed by design but is not production tested.
35. The Thermal Warning circuit does not force IC shutdown above this temperature. It is possible to set a bit in the MASK register to
generate an interrupt when overtemperature is detected, and the status bit will always indicate if any of the three individual Thermal
Warning circuits in the IC sense a fault.
33937
12
Analog Integrated Circuit Device Data
Freescale Semiconductor