MRF8P8300HR6 Datasheet, PDF (8/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

V_DD = 28 Vdc, I_DQ = 2000 mA, P_out = 96 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
730
1.07 -- j1.15
0.86 -- j0.18
750
1.06 -- j0.97
0.90 + j0.04
770
1.11 -- j0.78
1.07 + j0.46
790
1.05 -- j0.62
1.28 -- j0.67
810
1.11 -- j0.45
0.88 -- j0.12
830
1.19 -- j0.26
0.87 + j0.04
850
1.95 + j0.48
0.82 + j0.05
870
1.35 -- j1.66
0.71 + j0.12
890
0.95 -- j1.07
0.59 + j0.22
Z_source = Test circuit impedance as measured from
gate to ground, gate leads are tied together.
Z_load = Test circuit impedance as measured from
drain to ground, drain leads are tied together.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 11. Series Equivalent Source and Load Impedance
MRF8P8300HR6 MRF8P8300HSR6
8
RF Device Data
Freescale Semiconductor