English
Language : 

MRF8P8300HR6 Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors
TYPICAL CHARACTERISTICS
25
36
24 ηD
23
22
21
34
VDD = 28 Vdc, Pout = 96 W (Avg.), IDQ = 2000 mA
32
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30
28
20
Gps --30
0
--1
19
18
IRL
17
PARC
--32
--4
--1.3
--34
--8
--1.6
--36
--12
--1.9
16
ACPR
--38
--16
--2.2
15
--40
--20
--2.5
730 750 770 790 810 830 850 870 890
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 96 Watts Avg.
--10
VDD = 28 Vdc, Pout = 290 W (PEP), IDQ = 2000 mA
Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 805 MHz
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
IM7--U
IM7--L
--60
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
22
1
56
--25
VDD = 28 Vdc, IDQ = 2000 mA, f = 805 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
21.5
0
ACPR 50
--30
21
--1
ηD 44
--35
--1 dB = 75.1 W
20.5
--2
38
--40
20
--3
--3 dB = 153.4 W
Gps
--2 dB = 110.5 W
32
--45
19.5
--4
Input Signal PAR = 7.5 dB @ 0.01%
PARC
26
--50
Probability on CCDF
19
--5
20
--55
40
70
100
130
160
190
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P8300HR6 MRF8P8300HSR6
6
RF Device Data
Freescale Semiconductor