MRF8P8300HR6 Datasheet, PDF (3/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical Performances (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 2000 mA, 790--820 MHz Bandwidth
P_out @ 1 dB Compression Point, CW
P1dB
—
340
—
IMD Symmetry @ 290 W PEP, P_out where IMD Third Order
Intermodulation  30 dBc
IMD_sym
—
35
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW_res
—
35
—
Gain Flatness in 30 MHz Bandwidth @ P_out = 96 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
G_F
—
0.5
—
∆G
—
0.0185
—
Output Power Variation over Temperature
(--30°C to +85°C)
∆P1dB
—
0.0076
—
Unit
W
MHz
MHz
dB
dB/°C
dB/°C
RF Device Data
Freescale Semiconductor
MRF8P8300HR6 MRF8P8300HSR6
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