MRF8P8300HR6 Datasheet, PDF (7/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
23
66
0
790 MHz
22 790 MHz 805 MHz _{820 MHz}
805 MHz
55
--10
820 MHz
η_D
21
G_ps
44
--20
20
V_DD = 28 Vdc, I_DQ = 2000 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
19 Input Signal PAR = 7.5 dB @ 0.01%
ACPR ₃₃
--30
22
--40
Probability on CCDF
18
820 MHz
11
--50
805 MHz
17
790 MHz
0
--60
1
10
100
400
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
10
Gain
20
5
16
0
12
--5
IRL
8
--10
V_DD = 28 Vdc
4
P_in = 0 dBm
--15
I_DQ = 2000 mA
0
--20
580 640 700 760 820 880 940 1000 1060
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 7.5 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0 1 2 3 4 5 6 7 8 9 10
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
RF Device Data
Freescale Semiconductor
10
0
--10
3.84 MHz
--20
Channel BW
--30
--40
--50
--60 --ACPR in 3.84 MHz
Integrated BW
--70
+ACPR in 3.84 MHz
Integrated BW
--80
--90
--100
--9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P8300HR6 MRF8P8300HSR6
7