MRF8P8300HR6 Datasheet, PDF (2/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 70 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 400 μAdc)
V_GS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_DQ = 2000 mA, Measured in Functional Test)
V_GS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 3 Adc)
V_DS(on)
0.1
0.2
0.3
Vdc
Functional Tests ⁽²⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 2000 mA, P_out = 96 W Avg., f = 820 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
G_ps
20.0
20.9
23.5
dB
η_D
34.5
35.7
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.9
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
--38.2
--36.5
dBc
Input Return Loss
IRL
—
--12
--9
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 2000 mA, P_out = 96 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
IRL
(%)
(dB)
(dBc)
(dB)
790 MHz
20.9
35.2
6.2
--38.1
--11
805 MHz
21.0
35.5
6.2
--38.1
--12
820 MHz
20.9
35.7
6.1
--38.2
--12
1. Each side of device measured separately.
2. Part internally matched both on input and output.
(continued)
MRF8P8300HR6 MRF8P8300HSR6
2
RF Device Data
Freescale Semiconductor