MRF8P8300HR6 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF8P8300H
Rev. 0, 1/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 790 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
2000 mA, P_out = 96 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
MRF8P8300HR6
MRF8P8300HSR6
790--820 MHz, 96 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
790 MHz
20.9
35.2
6.2
--38.1
805 MHz
21.0
35.5
6.2
--38.1
820 MHz
20.9
35.7
6.1
--38.2
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out), Designed for
Enhanced Ruggedness
• Typical P_out @ 1 dB Compression Point ≃ 340 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
CASE 375D--05, STYLE 1
NI--1230
MRF8P8300HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8P8300HSR6
RF_inA/V_GSA 3
1 RF_outA/V_DSA
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
Value
Unit
--0.5, +70 Vdc
--6.0, +10 Vdc
32, +0
Vdc
--65 to +150 °C
150
°C
225
°C
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 96 W CW, 28 Vdc, I_DQ = 2000 mA, 820 MHz
Case Temperature 85°C, 300 W CW, 28 Vdc, I_DQ = 2000 mA, 820 MHz
R_θJC
°C/W
0.26
0.21
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P8300HR6 MRF8P8300HSR6
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