MRF8HP21130HR3 Datasheet, PDF (8/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

V_DD = 28 Vdc, V_GSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
f
(MHz)
2110
Z_source
(Ω)
3.10 -- j7.30
Z_load ⁽¹⁾
(Ω)
5.40 + j0.50
(dBm)
51.4
P1dB
(W)
138
η_D (%)
55.8
(dBm)
52.2
2140 3.77 -- j7.80 5.00 + j1.80
51.2
132
54.4
52.0
2170 4.30 -- j8.50 4.30 + j1.50
51.2
132
54.1
52.0
(1) Load impedance for optimum P1dB power.
Z_source = Impedance as measured from gate contact to ground.
Z_load = Impedance as measured from drain contact to ground.
P3dB
(W)
166
158
158
η_D (%)
56.9
56.7
55.2
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 12. Peaking Side Load Pull Performance — Maximum P1dB Tuning
V_DD = 28 Vdc, V_GSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
f
(MHz)
2110
Z_source
(Ω)
3.10 -- j7.30
Z_load ⁽¹⁾
(Ω)
4.80 -- j5.20
(dBm)
49.1
P1dB
(W)
81
η_D (%)
67.2
(dBm)
51.0
P3dB
(W)
126
2140 3.77 -- j7.80 6.50 -- j4.80
49.0
79
66.6
49.9
98
2170 4.30 -- j8.50 6.90 -- j4.90
48.8
76
66.7
49.9
98
(1) Load impedance for optimum P1dB efficiency.
Z_source = Impedance as measured from gate contact to ground.
Z_load = Impedance as measured from drain contact to ground.
η_D (%)
68.2
67.5
67.4
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
MRF8HP21130HR3 MRF8HP21130HSR3
8
RF Device Data
Freescale Semiconductor