MRF8HP21130HR3 Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18
V_DD = 28 Vdc, I_DQB = 360 mA, V_GSA = 0.4 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
16 _{Bandwidth, Input Signal PAR = 9.9 dB}
@ 0.01% Probability on CCDF
14
60
0
η_D
50
--10
40
--20
2110 MHz
12
2140 MHz
ACPR
30
--30
2170 MHz
10
20
--40
2140 MHz ^{2170 MHz}
8
2110 MHz
G_ps
10
--50
6
0
--60
1
10
100 150
P_out, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
15
12
9
6
V_DD = 28 Vdc
3
P_in = 0 dBm
I_DQB = 360 mA
0
V_GSA = 0.4 Vdc
1800 1875 1950 2025 2100 2175 2250 2325 2400
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
10
0
--10
3.84 MHz
--20
Channel BW
--30
--40
0.01
W--CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 9.9 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0
2
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
--50
--60 --ACPR in 3.84 MHz
Integrated BW
--70
+ACPR in 3.84 MHz
Integrated BW
--80
--90
--100
--9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8HP21130HR3 MRF8HP21130HSR3
6
RF Device Data
Freescale Semiconductor