MRF8HP21130HR3 Datasheet, PDF (2/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 28 W CW, 28 Vdc, I_DQB = 360 mA, V_GSA = 0.4 Vdc, 2170 MHz
Case Temperature 105°C, 110 W CW⁽³⁾, 28 Vdc, I_DQB = 360 mA, V_GSA = 0.4 Vdc, 2170 MHz
R_θJC
0.60
0.50
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽⁴⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics -- Side A ⁽⁴⁾
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 102 μAdc)
V_GS(th)
0.1
0.9
1.6
Vdc
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 1.02 Adc)
V_DS(on)
0.1
0.2
0.3
Vdc
On Characteristics -- Side B ⁽⁴⁾
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 75 μAdc)
V_GS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_DB = 360 mA, Measured in Functional Test)
V_GS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 0.75 Adc)
V_DS(on)
0.1
0.2
0.3
Vdc
Functional Tests ^(5,6) (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQB = 360 mA, V_GSA = 0.4 Vdc,
P_out = 28 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
G_ps
13.0
η_D
42.0
14.0
45.1
16.0
dB
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.7
7.6
—
dB
Adjacent Channel Power Ratio
ACPR
—
--34.8
--30.0
dBc
Typical Broadband Performance ⁽⁶⁾ (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQB = 360 mA,
V_GSA = 0.4 Vdc, P_out = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
G_ps
(dB)
η_D
Output PAR
ACPR
(%)
(dB)
(dBc)
2110 MHz
14.2
46.4
7.9
--35.4
2140 MHz
14.1
45.7
7.7
--35.3
2170 MHz
14.0
45.1
7.6
--34.8
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Doherty configuration.
(continued)
MRF8HP21130HR3 MRF8HP21130HSR3
2
RF Device Data
Freescale Semiconductor