MRF8HP21130HR3 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF8HP21130H
Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V_DD = 28 Volts,
I_DQB = 360 mA, V_GSA = 0.4 Vdc, P_out = 28 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
MRF8HP21130HR3
MRF8HP21130HSR3
2110--2170 MHz, 28 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
2110 MHz
14.2
46.4
7.9
--35.4
2140 MHz
14.1
45.7
7.7
--35.3
2170 MHz
14.0
45.1
7.6
--34.8
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW ⁽¹⁾
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 3 dB Compression Point ≃ 166 Watts CW ⁽¹⁾
Features
• Advanced High Performance In--Package Doherty
• Production Tested in a Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 8.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 8.
Table 1. Maximum Ratings
CASE 465M--01, STYLE 1
NI--780--4
MRF8HP21130HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8HP21130HSR3
RF_inA/V_GSA 3
Peaking
1 RF_outA/V_DSA
RF_inB/V_GSB 4
Carrier
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(2,3)
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
118
0.28
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8HP21130HR3 MRF8HP21130HSR3
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