MRF8HP21130HR3 Datasheet, PDF (5/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
14.8
48
14.6
V_DD = 28 Vdc, P_out = 28 W (Avg.), I_DQB = 360 mA, V_GSA = 0.4 Vdc
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
47
14.4
46
14.2
η_D 45
14
44
13.8
G_ps
--32
--2
13.6
PARC
13.4
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
13.2
--33
--2.2
--34
--2.4
--35
--2.6
13
--36
--2.8
ACPR
12.8
--37
--3
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ P_out = 28 Watts Avg.
--10
V_DD = 28 Vdc, P_out = 52 W (PEP), I_DQB = 360 mA
V_GSA = 0.4 Vdc, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--L _IM3--U
--30
IM5--L
IM5--U
--40
IM7--L
--50
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
15
1
60
--15
V_DD = 28 Vdc, I_DQB = 360 mA, V_GSA = 0.4 Vdc
f = 2140 MHz, Single--Carrier W--CDMA
14.5
0
η_D ⁵⁰
--20
14
--1
13.5
--2 _{--1 dB = 17 W}
40
--25
G_ps
ACPR
30
--30
13
--2 dB = 26 W
--3
--3 dB = 34 W
20
--35
12.5
--4
10
--40
3.84 MHz Channel Bandwidth, Input Signal
PARC
PAR = 9.9 dB @ 0.01% Probability on CCDF
12
--5
0
--45
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
RF Device Data
Freescale Semiconductor
MRF8HP21130HR3 MRF8HP21130HSR3
5