MRF8HP21130HR3 Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

V_DD = 28 Vdc, I_DQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
f
(MHz)
2110
Z_source
(Ω)
6.20 -- j10.7
Z_load ⁽¹⁾
(Ω)
3.40 -- j6.70
(dBm)
48.4
P1dB
(W)
69
η_D (%)
55.3
(dBm)
49.2
2140 7.80 -- j11.5 3.40 -- j6.80
48.4
69
55.5
49.2
2170 9.20 -- j12.2 3.00 -- j7.24
48.4
69
52.5
49.2
(1) Load impedance for optimum P1dB power.
Z_source = Impedance as measured from gate contact to ground.
Z_load = Impedance as measured from drain contact to ground.
P3dB
(W)
83
83
83
η_D (%)
56.1
55.3
53.3
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
V_DD = 28 Vdc, I_DQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
f
(MHz)
2110
Z_source
(Ω)
6.20 -- j10.7
Z_load ⁽¹⁾
(Ω)
7.60 -- j6.30
(dBm)
46.8
P1dB
(W)
48
η_D (%)
63.5
(dBm)
48.0
P3dB
(W)
63
2140 7.80 -- j11.5 7.71 -- j5.50
46.6
46
63.5
47.8
60
2170 9.20 -- j12.2 6.40 -- j5.60
47.0
50
62.3
47.8
60
(1) Load impedance for optimum P1dB efficiency.
Z_source = Impedance as measured from gate contact to ground.
Z_load = Impedance as measured from drain contact to ground.
η_D (%)
64.1
63.9
62.5
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
RF Device Data
Freescale Semiconductor
MRF8HP21130HR3 MRF8HP21130HSR3
7