MRF6VP41KHR7 Datasheet, PDF (8/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Z_o = 2 Ω
f = 450 MHz
Z_source
f = 450 MHz
Z_load
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
450
0.86 + j1.06
1.58 + j1.22
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
--
Z _source
--
+
Z _load
Output
Matching
Network
Figure 14. Series Equivalent Source and Load Impedance — 450 MHz
MRF6VP41KHR6 MRF6VP41KHSR6
8
RF Device Data
Freescale Semiconductor, Inc.