MRF6VP41KHR7 Datasheet, PDF (10/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Z_o = 10 Ω
f = 352.2 MHz
Z_source
f = 352.2 MHz
Z_load
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W CW
f
MHz
Z_source
Ω
Z_load
Ω
352.2
0.5 + j6.5
2.9 + j6.35
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
--
Z _source
--
+
Z _load
Output
Matching
Network
Figure 16. Series Equivalent Source and Load Impedance — 352.2 MHz
MRF6VP41KHR6 MRF6VP41KHSR6
10
RF Device Data
Freescale Semiconductor, Inc.