MRF6VP41KHR7 Datasheet, PDF (2/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle,
450 MHz ⁽³⁾
Thermal Resistance, Junction to Case
CW: Case Temperature 84°C, 1000 W CW, 352.2 MHz
Symbol
Z_θJC
Value ^(1,2)
0.03
Unit
°C/W
R_θJC
0.15
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
2, passes 2000 V
Machine Model (per EIA/JESD22--A115)
A, passes 125 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽⁴⁾
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
10
μAdc
Drain--Source Breakdown Voltage
(I_D = 300 mA, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
V_(BR)DSS
110
—
—
Vdc
I_DSS
—
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
5
mA
On Characteristics
Gate Threshold Voltage ⁽⁴⁾
(V_DS = 10 Vdc, I_D = 1600 μAdc)
Gate Quiescent Voltage ⁽⁵⁾
(V_DD = 50 Vdc, I_D = 150 mAdc, Measured in Functional Test)
Drain--Source On--Voltage ⁽⁴⁾
(V_GS = 10 Vdc, I_D = 4 Adc)
V_GS(th)
1
1.68
3
Vdc
V_GS(Q)
1.5
2.2
3.5
Vdc
V_DS(on)
—
0.28
—
Vdc
Dynamic Characteristics ⁽⁴⁾
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
3.3
—
pF
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
147
—
pF
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_iss
—
506
—
pF
Functional Tests ⁽⁵⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak (200 W Avg.), f = 450 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
G_ps
19
20
22
dB
η_D
60
64
—
%
Input Return Loss
IRL
—
--18
--9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
(continued)
MRF6VP41KHR6 MRF6VP41KHSR6
2
RF Device Data
Freescale Semiconductor, Inc.