MRF6VP41KHR7 Datasheet, PDF (3/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W CW
Power Gain
G_ps
—
20.1
—
dB
Drain Efficiency
η_D
—
67
—
%
Input Return Loss
IRL
—
--10.2
—
dB
Typical Performance — 500 MHz (In Freescale 500 MHz Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak
(200 W Avg.), f = 500 MHz, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G_ps
—
19.5
—
dB
Drain Efficiency
η_D
—
66
—
%
Input Return Loss
IRL
—
--23
—
dB
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP41KHR6 MRF6VP41KHSR6
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