MRF6VP41KHR7 Datasheet, PDF (18/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

REVISION HISTORY (cont.)
Revision
5
6
Date
Apr. 2010
Apr. 2012
Description
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 17
• Table 1, Maximum Ratings, CW Operation: changed CW rating from an RF based value to a maximum
power dissipated value -- CW Operation @ T_C = 25°C, 1107 W changed to Total Device Dissipation @ T_C =
25°C, CW only, 1333 watts. Value change to 1333 watts applies only to devices with a date code of
QQ1218 or newer. Refer to PCN15074, p. 1
• Table 2, Thermal Characteristics, Thermal Resistance, Junction to Case: 2.4 mil wire configuration thermal
testing resulted in a case temperature change from 48°C to 84°C, p. 2
• Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
• Modified figure titles and/or graph axes labels to clarify application use, p. 4--7
• Fig. 12, Transient Thermal Impedance: graph updated to show correct CW operation, p. 7
• Fig. 13, MTTF versus Junction Temperature -- Pulsed removed, p. 7. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
• Fig. 14, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7 (renumbered as Fig. 13 after Fig. 13, MTTF versus Junction
Temperature -- Pulsed removed)
MRF6VP41KHR6 MRF6VP41KHSR6
18
RF Device Data
Freescale Semiconductor, Inc.