MRF6VP41KHR7 Datasheet, PDF (7/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
65
60
T_C = --30_C
25_C
85_C
55
50
V_DD = 50 Vdc
45
I_DQ = 150 mA
f = 450 MHz
40
Pulse Width = 100 μsec
Duty Cycle = 20%
35
20
25
30
35
40
45
P_in, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
22
100
21
V_DD = 50 Vdc
I_DQ = 150 mA
T_C = --30_C
90
20 f = 450 MHz
80
19 ^{Pulse Width = 100 μsec}
Duty Cycle = 20%
85_C
70
18
60
17
G_ps
25_C
50
16
40
15
η_D
30
14
20
13
10
12
0
1
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency
versus Output Power
0.18
f = 450 MHz
0.16
0.14
0.12
D = 0.7
0.1
D = 0.5
0.08
P_{D t1}
t₂
0.06
D = 0.3
0.04
D = 0.1
0.02
0
0.00001 0.0001
0.001
T_C = Case Temperature
Z_JC = Thermal Impedance (from graph)
P_D = Peak Power Dissipation
D = Duty Factor = t₁/t₂
t₁ = Pulse Width; t₂ = Pulse Period
T_J (peak) = P_D * Z_θJC + T_C
0.01
0.1
1
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Transient Thermal Impedance
10⁹
V_DD = 50 Vdc
10⁸
P_out = 1000 W CW
η_D = 67%
10⁷
10⁶
10⁵
90
110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE: For pulse applications or CW conditions, use the MTTF
calculator referenced above.
Figure 13. MTTF versus Junction Temperature -- CW
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP41KHR6 MRF6VP41KHSR6
7