MRF6VP3450HR6_10 Datasheet, PDF (8/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — TWO--TONE
--20
V_DD = 50 Vdc, I_DQ = 1400 mA, f1 = 854 MHz
--30 ^{f2 = 860 MHz, Two--Tone Measurements}
--40
3rd Order
--50
5th Order
--60
--70
7th Order
--10
V_DD = 50 Vdc, P_out = 450 W (PEP), I_DQ = 1400 mA
Two--Tone Measurements
--20
3rd Order
--30
--40
5th Order
--50
--60
7th Order
--80
5
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 10. Intermodulation Distortion
Products versus Output Power
--70
0.1
1
10
60
TWO--TONE SPACING (MHz)
Figure 11. Intermodulation Distortion
Products versus Tone Spacing
23
22.8
22.6
22.4 ^IDQ ^{= 1400 mA}
22.2
22 1075 mA
21.8
975 mA
21.6
1250 mA
21.4 ^{700 mA}
21.2
21
50
V_DD = 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 12. Two--Tone Power Gain versus
Output Power
--20
V_DD = 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
--25
--30 _{975 mA}
I_DQ = 700 mA
--35 ^{1075 mA}
--40 _{1250 mA}
--45
1400 mA
--50
50
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 13. Third Order Intermodulation
Distortion versus Output Power
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
8
RF Device Data
Freescale Semiconductor