MRF6VP3450HR6_10 Datasheet, PDF(3/18 Page) Freescale Semiconductor, Inc

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MRF6VP3450HR6_10 Datasheet, PDF (3/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Pulsed Performances (In Freescale Broadband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1200 mA, Pout = 520 W,

f = 470--860 MHz, 50 Î¼sec Pulse Width, 2.5% Duty Cycle

Power Gain

Gps

20.5

Drain Efficiency

Î·D

Input Return Loss

IRL

--3

Pout @ 1 dB Compression Point, Pulsed CW

(f = 470--860 MHz)

P1dB

520

Typical Two--Tone Performances (In Freescale Broadband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 450 W PEP,

f = 470--860 MHz, 100 kHz Tone Spacing

Power Gain

Drain Efficiency

Gps

Î·D

Intermodulation Distortion

IM3

--29

dBc

Input Return Loss

IRL

--2

RF Device Data

Freescale Semiconductor

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

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