MRF6VP3450HR6_10 Datasheet, PDF (12/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 860 MHz
Z_o = 10 Ω
f = 860 MHz
Z_load
f = 470 MHz
Z_source
f = 470 MHz
V_DD = 50 Vdc, I_DQ = 1400 mA, P_out = 90 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
470
2.81 -- j1.88
5.52 + j2.34
650
6.46 + j1.21
7.46 + j2.26
860
3.90 + j2.09
2.60 + j3.73
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
--
Matching
Network
--
Z _source
+
Z _load
Figure 24. Series Equivalent Source and Load Impedance
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
12
RF Device Data
Freescale Semiconductor