MRF6VP3450HR6_10 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common--source amplifier
applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB--T OFDM Performance: V_DD = 50 Volts, I_DQ = 1400 mA,
P_out = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain — 22.5 dB
Drain Efficiency — 28%
ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth
• Typical Broadband Two--Tone Performance: V_DD = 50 Volts, I_DQ = 1400 mA,
P_out = 450 Watts PEP, f = 470--860 MHz
Power Gain — 22 dB
Drain Efficiency — 44%
IM3 — --29 dBc
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
450 Watts CW
90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP3450H
Rev. 4, 4/2010
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450HSR5
860 MHz, 450 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF6VP3450HR6(HR5)
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP3450HSR6(HSR5)
PARTS ARE PUSH--PULL
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
Table 1. Maximum Ratings
(Top View)
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain--Source Voltage
V_DSS
--0.5, +110
Vdc
Gate--Source Voltage
V_GS
--6.0, +10
Vdc
Storage Temperature Range
T_stg
-- 65 to +150
°C
Case Operating Temperature
T_C
150
°C
Operating Junction Temperature ^(1,2)
T_J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2008--2010. All rights reser_Mve_Rd._{F6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5}
RF Device Data
Freescale Semiconductor
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