MRF6VP3450HR6_10 Datasheet, PDF (17/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
2.1
3
4
Date
July 2008
Aug. 2008
Sept. 2008
Nov. 2008
July 2009
Apr. 2010
Description
• Initial Release of Data Sheet
• Corrected component designation part number for C34, 35 in Table 5. Test Circuit Component Designation
and Values, p. 5
• Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to
denote that each side of device is measured separately, p. 7
• Adjusted imaginary component signs in Fig. 24, Series Equivalent Source and Load Impedance data table
and replotted data, p. 12
• Fig. 24, Series Equivalent Source and Load Impedance, corrected Z_source copy to read ”Test circuit
impedance as measured from gate to gate, balanced configuration” and Z_load copy to read ”Test circuit
impedance as measured from gate to gate, balanced configuration”, p. 12
• Corrected Fig. 24 Revision History Z_load copy to read ”Test circuit impedance as measured from drain to
drain, balanced configuration”, p. 12
• Added capability of handling 10:1 VSWR @ 50 Vdc, 850 MHz, 450 Watts CW, p. 1
• Added thermal resistance at 450 W CW, Thermal Characteristics table, p. 2
• Corrected Fig. 23, MTTF versus Junction Temperature, to match values given by the MRF6VP3450H/HS
MTTF calculator, p. 11
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 17
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Reporting of pulsed thermal data now shown using the Z_θJC symbol, p. 2
• Fig. 2, Test Circuit Schematic, Z--list, corrected Z4, Z5 from 1.400″ x 0.590″ Microstrip to 1.400″ x 0.059″
Microstrip, p. 4
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
17