MRF6VP3450HR6_10 Datasheet, PDF (7/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

1000
C_iss
C_oss
100
10
C_rss
TYPICAL CHARACTERISTICS
100
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
T_J = 150_C
T_J = 175_C
10
T_J = 200_C
1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
T_C = 25_C
1
1
10
100
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
24
60
23.5 ^VDD ^{= 50 Vdc, I}DQ ^{= 1200 mA, f = 860 MHz}
55
23 ^{Pulse Width = 50 μsec, Duty Cycle = 2.5%}
50
22.5
45
22
40
21.5
35
21
G_ps
30
20.5
25
20
20
19.5
19
η_D
15
10
18.5
18
10
5
0
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
67
66
Ideal
65
64
P3dB = 57.85 dBm (610 W)
63 _{P2dB = 57.65 dBm}
62 _{(582 W)}
61
60 _{P1dB = 57.15 dBm}
59 _{(519 W)}
58
57
Actual
56
55
54
V_DD = 50 Vdc, I_DQ = 1200 mA, f = 860 MHz
53
Pulse Width = 12 μsec, Duty Cycle = 1%
52
30 31 32 33 34 35 36 37 38 39 40 41 42
P_in, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
24
23
22
21
20
50 V
45 V
19
V_DD = 40 V
18
17
V_DD = 50 Vdc, I_DQ = 1200 mA, f = 860 MHz
Pulse Width = 50 μsec, Duty Cycle = 2.5%
16
0 100 200 300 400 500
600 700
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
25
V_DD = 50 Vdc, I_DQ = 1200 mA, f = 860 MHz
24 ^{Pulse Width = 50 μsec, Duty Cycle = 2.5%}
23
22 T_C = --30_C
21
20 _{85_C}
19
25_C
G_ps
η_D
70
25_C
--30_C
60
85_C
50
40
30
20
10
18
0
10
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
7