MRF6V10250HSR3 Datasheet, PDF (8/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PACKAGE DIMENSIONS
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
2
D
bbb M T A M
2X K
BM
H
E
A
N (LID)
ccc M T A M B M
M (INSULATOR)
bbb M T A M B M
A
(FLANGE)
3
C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U −−− 0.040
Z −−− 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
−−− 1.02
−−− 0.76
0.127 REF
0.254 REF
0.381 REF
CASE 465A - 06
ISSUE H
NI - 780S
MRF6V10250HSR3
8
RF Device Data
Freescale Semiconductor