MRF6V10250HSR3 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 mA)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 90 Vdc, V_GS = 0 Vdc)
I_GSS
—
—
500
nAdc
V_(BR)DSS
100
—
—
Vdc
I_DSS
—
—
50
μAdc
I_DSS
—
—
2
mA
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 528 μAdc)
Gate Quiescent Voltage
(V_DD = 50 Vdc, I_D = 250 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1.32 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1
1.8
3
Vdc
V_GS(Q)
2
2.4
3
Vdc
V_DS(on)
—
0.25
—
Vdc
C_rss
—
0.8
—
pF
C_oss
—
340
—
pF
C_iss
—
280
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 250 mA, P_out = 250 W Peak (25 W Avg.), f = 1090 MHz,
Pulsed, 100 μsec Pulse Width, 10% Duty Cycle
Power Gain
G_ps
19
21
23
dB
Drain Efficiency
η_D
55
60
—
%
Input Return Loss
IRL
—
- 12
-9
dB
1. Part internally matched both on input and output.
MRF6V10250HSR3
2
RF Device Data
Freescale Semiconductor