MRF6V10250HSR3 Datasheet, PDF (5/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
1000
50
C_oss
C_iss
100
Measured with ±30 mV(rms)ac @ 1 MHz
10
V_GS = 0 Vdc
10
C_rss
1
T_J = 150°C
T_J = 200°C
T_J = 175°C
0.1
0
10
20
30
40
50
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain - Source Voltage
T_C = 25°C
1
1
10
100
300
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
24
70
22
60
G_ps
20
50
η_D
18
40
V_DD = 50 Vdc, I_DQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
16
50
100
30
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
58
P3dB = 54.94 dBm (311 W)
Ideal
57
56 ^{P1dB = 54.55 dBm (285 W)}
55
Actual
54
53
52
51
50
V_DD = 50 Vdc, I_DQ = 250 mA, f = 1090 MHz
49
Pulse Width = 100 μsec, Duty Cycle = 10%
48
26
28
30
32
34
36
38
P_in, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
23
22
I_DQ = 1 A
750 mA
500 mA
21
250 mA
20
19
18 ^{VDD = 50 Vdc, f = 1090 MHz}
Pulse Width = 100 μsec, Duty Cycle = 10%
17
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
22
21
20
19
45 V
50 V
18
40 V
17
35 V
16
V_DD = 30 V
I_DQ = 250 mA, f = 1090 MHz
15
Pulse Width = 100 μsec
Duty Cycle = 10%
14
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
5