MRF6V10250HSR3 Datasheet, PDF (7/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 10 Ω
Z_load
f = 1090 MHz
f = 978 MHz
Z_source
f = 978 MHz
f = 1090 MHz
V_DD = 50 Vdc, I_DQ = 250 mA, P_out = 250 W Peak
f
MHz
Z_source
W
Z_load
W
978
1.67 - j2.04
4.3 - j2.72
1030
2.39 - j2.23
5.66 - j2.42
1090
3.26 - j3.72
5.85 - j2.39
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
7