MRF6V10250HSR3 Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
• Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 250 mA,
P_out = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec,
Duty Cycle = 10%
Power Gain — 21 dB
Drain Efficiency — 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak
Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V10250HS
Rev. 0, 2/2008
MRF6V10250HSR3
1090 MHz, 250 W, 50 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
V_DSS
- 0.5, +100
Vdc
V_GS
- 6.0, +10
Vdc
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 250 W Pulsed, 100 μsec Pulse Width, 10% Duty Cycle
R_θJC
0.10
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
1