MRF6V10250HSR3 Datasheet, PDF (6/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
400
24
70
T_C = −30_C
300
25_C
22
T_C = −30_C
G_ps
60
85_C
25_C
200
V_DD = 50 Vdc
100
I_DQ = 250 mA
f = 1090 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
0
0
1
2
3
4
5
6
P_in, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Output versus
Power Input
20
85_C
50
55_C
η_D
18
40
V_DD = 50 Vdc, I_DQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
18
30
50
100
400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
10⁷
10⁶
10⁵
10⁴
10³
90
110 130 150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 250 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 10%, and η_D = 60%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF6V10250HSR3
6
RF Device Data
Freescale Semiconductor