MRF6S21140HR3_10 Datasheet, PDF (8/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

f = 2200 MHz
f = 2080 MHz
Z_load*
Z_o = 25 Ω
f = 2200 MHz
Z_{source f = 2080 MHz}
V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 30 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2080
2110
2140
7.53 -- j10.99
7.57 -- j10.67
7.58 -- j10.23
1.40 -- j3.03
1.37 -- j2.78
1.34 -- j2.52
2170
2200
7.51 -- j9.73
7.44 -- j9.32
1.32 -- j2.28
1.31 -- j2.06
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21140HR3 MRF6S21140HSR3
8
RF Device Data
Freescale Semiconductor