MRF6S21140HR3_10 Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 30 W Avg., and η_D = 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W--CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
0.0001
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0
2
4
6
8
10
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
+20
3.84 MHz
+30
Channel BW
0
--10
--20
--30
--40
--50
--ACPR in +ACPR in
--60 --IM3 in
3.84 MHz BW 3.84 MHz BW +IM3 in
--70 ^{3.84 MHz BW}
3.84 MHz BW
--80
--25 --20 --15 --10 --5 0 5 10 15 20 25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
7