MRF6S21140HR3_10 Datasheet, PDF (2/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 1200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 3 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
V_GS(th)
1
2
3
Vdc
V_GS(Q)
2
2.8
4
Vdc
V_DS(on)
0.1
0.21
0.3
Vdc
C_rss
—
2
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 30 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
14.5
15.5
17.5
dB
Drain Efficiency
η_D
26
27.5
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--41
--38
dBc
Input Return Loss
IRL
—
--15
--9
dB
1. Part is internally matched both on input and output.
MRF6S21140HR3 MRF6S21140HSR3
2
RF Device Data
Freescale Semiconductor