MRF6S21140HR3_10 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
• Typical 2--carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ = 1200 mA,
P_out = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S21140H
Rev. 5, 2/2010
MRF6S21140HR3
MRF6S21140HSR3
2110--2170 MHz, 30 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--03, STYLE 1
NI--880
MRF6S21140HR3
CASE 465C--02, STYLE 1
NI--880S
MRF6S21140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
--0.5, +68
Vdc
V_GS
--0.5, +12
Vdc
T_stg
-- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 75°C, 30 W CW
R_θJC
0.35
0.38
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
1